features 1 h igh diode semiconductor sot- 23 symbol parameter value unit v collector-base voltage 75 v v ce o collector-emitter voltage 30 v v eb o emitter-base voltage 6 v i c co llector current 600 ma p c co llector power dissipation 250 mw r j a thermal resistance from junction to ambient 500 /w t j jun ction temperature 150 t st g storage temperature -55 +150 classification of h fe electrical characteristics (ta =25 unless otherwise specified sot -23 plastic-encap sulate transistors transistor( np n ) e b c MMBT2222 cbo genernal purpose amplifier p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 a , i e =0 75 v collector - emitter breakdown voltage v (br) c e o i c = 1 0 ma, i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 1 0 a , i c =0 6 v collector cut - off current i cbo v cb = 6 0 v, i e =0 10 n a collector cut - off current i c ex v c e = 30 v, v be(off) = 3v 10 n a emitter cut - off current i ebo v eb = 3 v, i c =0 0.1 a h fe (1) * v ce = 10 v, i c = 150m a 100 300 h fe (2) * v ce = 10 v, i c = 0.1m a 40 dc current gain h fe (3) * v ce = 10 v, i c = 500m a 42 collector - emitter saturation voltage v ce(sat) 1 * i c = 500m a, i b = 50 ma 1 v collector - emitter saturation voltage v ce(sat) 2 * i c = 150m a, i b = 15ma 0.3 v base - emitter saturation voltage v b e(sat) * i c = 500m a, i b = 50ma 1.2 v transition frequency f t v ce = 2 0 v,i c = 20 ma , f= 100m hz 300 mhz delay time t d 10 ns rise time t r v c c = 30 v, v be(off) = - 0. 5v i c = 150m a, i b 1 = 15ma 25 ns storage time t s 225 ns fall time t f v c c = 30 v, i c = 150m a, i b 1 = i b 2 =15ma 60 ns * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. rank l h range 100 C 200 200 C 300 marking m1b
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 0.1 1 10 1 10 100 0.1 1 10 100 0 100 200 300 400 500 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0 25 50 75 100 125 150 0 100 200 300 400 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 024681 01 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1mhz i e =0/ i c =0 t a =25 20 v cb / v eb c ob / c ib c ob c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =10v 600 i c t a =25 t a =100 dc current gain h fe collector current i c (ma) 100 10 v be i c common emitter v ce =10v 600 t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) p c t a collector power dissipation pc (mw) ambient temperature ta ( ) h fe 600 =10 t a =100 t a =25 i c v cesat collector-emitter saturation voltage v cesat (v) collector current i c (ma) static characteristic 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 600 =10 i c v besat t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) 80 500 i c f t common emitter v ce =20v f=200mhz ta=25 transtion frequency f t (mhz) collector current i c (ma)
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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